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參數資料
| 型號： | MRF314 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER TRANSISTORS NPN SILICON |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數： | 1/6頁 |
| 文件大小： | 113K |
| 代理商： | MRF314 |
1
MRF314
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed primarily for wideband large–signal driver and output amplifier
stages in the 30–200 MHz frequency range.
Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 30 Watts
Minimum Gain = 10 dB
100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR
Gold Metallization System for High Reliability Applications
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
35
Vdc
Collector–Base Voltage
65
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
3.4
Adc
Total Device Dissipation @ TC = 25
°
C (1)
Derate above 25
°
C
82
0.47
Watts
W/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
2.13
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 30 mAdc, IB = 0)
V(BR)CEO
35
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 30 mAdc, VBE = 0)
V(BR)CES
65
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 30 mAdc, IE = 0)
V(BR)CBO
65
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 3.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
—
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
—
—
3.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 1.5 Adc, VCE = 5.0 Vdc)
hFE
20
—
80
—
NOTE:
(continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF
amplifiers.
Order this document
by MRF314/D
SEMICONDUCTOR TECHNICAL DATA
30 W, 30–200 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 211–07, STYLE 1
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相關代理商/技術參數 |
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|---|---|
| MRF314A | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF315 | 制造商:Ferraz Shawmut 功能描述: |
| MRF315A | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| MRF316 | 制造商:M/A-COM Technology Solutions 功能描述:TRANS GP BJT NPN 35V 9A 4PIN CASE 316-01 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF317 | 制造商:M/A-COM Technology Solutions 功能描述:TRANS GP BJT NPN 35V 12A 4PIN CASE 316-01 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT 制造商:M/A-COM Technology Solutions 功能描述:Trans GP BJT NPN 35V 12A 4-Pin Case 316-01 |
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