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參數(shù)資料
| 型號(hào)： | MRF393 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CASE 744A-01, 8 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 118K |
| 代理商： | MRF393 |
1
MRF393
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
. . . designed primarily for wideband large–signal output and driver amplifier
stages in the 30 to 500 MHz frequency range.
Specified 28 Volt, 500 MHz Characteristics —
Output Power = 100 W
Typical Gain = 9.5 dB (Class AB); 8.5 dB (Class C)
Efficiency = 55% (Typ)
Built–In Input Impedance Matching Networks for Broadband Operation
Push–Pull Configuration Reduces Even Numbered Harmonics
Gold Metallization System for High Reliability
100% Tested for Load Mismatch
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
6
7
2
3
1, 4
5, 8
The MRF393 is two transistors in a single package with separate base and collector leads
and emitters common. This arrangement provides the designer with a space saving
device capable of operation in a push–pull configuration.
PUSH–PULL TRANSISTORS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
30
Vdc
Collector–Base Voltage
60
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
16
Adc
Total Device Dissipation @ TC = 25
°
C (1)
Derate above 25
°
C
270
1.54
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.65
°
C/W
NOTE:
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF push–pull
amplifier.
Order this document
by MRF393/D
SEMICONDUCTOR TECHNICAL DATA
100 W, 30 to 500 MHz
CONTROLLED “Q”
BROADBAND PUSH–PULL
RF POWER TRANSISTOR
NPN SILICON
CASE 744A–01, STYLE 1
REV 7
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