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參數(shù)資料
| 型號： | MRF282Z |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 142K |
| 代理商： | MRF282Z |
1
MRF282S MRF282Z
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for class A and class AB PCN and PCS base station applications at
frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier
amplifier applications.
Specified Two–Tone Performance @ 2000 MHz, 26 Volts
Output Power = 10 Watts (PEP)
Power Gain = 11 dB
Efficiency = 30%
Intermodulation Distortion = –30 dBc
Specified Single–Tone Performance @ 2000 MHz, 26 Volts
Output Power = 10 Watts (CW)
Power Gain = 11 dB
Efficiency = 40%
Characterized with Series Equivalent Large–Signal
Impedance Parameters
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 10 Watts (CW) Output Power
Gold Metallization for Improved Reliability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VGS
PD
65
Vdc
Gate–Source Voltage
±
20
Vdc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
60
0.34
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
2.9
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10
μ
Adc)
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0)
IDSS
—
—
1.0
μ
Adc
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
—
—
1.0
μ
Adc
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF282/D
SEMICONDUCTOR TECHNICAL DATA
10 W, 2000 MHz, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 458–03, STYLE 1
(MRF282S)
CASE 458A–01, STYLE 1
(MRF282Z)
REV 1
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