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參數(shù)資料
| 型號： | MRF21085S |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 465A-06, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 168K |
| 代理商： | MRF21085S |
5.2–311
MRF21085 MRF21085S MRF21085SR3 MRF21085LS MRF21085LSR3
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Unit
Max
Typ
Min
Symbol
FUNCTIONAL TESTS (In Motorola Test Fixture)
Two–Tone Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Gps
—
13.6
—
dB
Two–Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
η
—
36
—
%
Two–Tone Intermodulation Distortion
(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IMD
—
–31
—
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IRL
—
–12
—
dB
Pout, 1 dB Compression Point
(VDD = 28 Vdc, IDQ = 1000 mA, f = 2170 MHz)
P1dB
—
100
—
W
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|---|---|
| MRF21085SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
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| MRF21090SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
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