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參數(shù)資料
| 型號(hào)： | MRF21085R3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780, CASE 465-06, 2 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 361K |
| 代理商： | MRF21085R3 |
MRF21085R3 MRF21085LSR3
5-515
Freescale Semiconductor
Wireless RF Product Device Data
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 Adc)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
10
Adc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
On Characteristics (DC)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 Adc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1000 mAdc)
VGS(Q)
3
3.9
5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.18
0.21
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
6
—
S
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1.0 MHz)
Crss
—
3.6
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3
measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Gps
12
13.6
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
η
20
23
—
%
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3
measured over 3.84 MHz BW at f1 -10 MHz and f2 +10 MHz
referenced to carrier channel power.)
IM3
—
-37.5
-35
dBc
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR
measured over 3.84 MHz at f1 -5 MHz and f2 +5 MHz.)
ACPR
—
-41
-38
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
IRL
—
-12
-9
dB
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 90 W CW, IDQ = 1000 mA, f = 2170 MHz
VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
1. Part is internally matched both on input and output.
(continued)
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