參數(shù)資料
型號: MRF21060SR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 357K
代理商: MRF21060SR3
MRF21060R3 MRF21060SR3
5-509
Freescale Semiconductor
Wireless RF Product Device Data
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 Adc)
V(BR)DSS
65
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
6
Adc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1
Adc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 Adc)
VGS(th)
2
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 500 mAdc)
VGS(Q)
2.5
3.9
4.5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
0.27
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
4.7
S
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
2.7
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two-Tone Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz)
Gps
11
12.5
dB
Two-Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz)
η
31
34
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz)
IMD
-30
-28
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz)
IRL
-12
dB
Pout, 1 dB Compression Point
(VDD = 28 Vdc, Pout = 60 W CW, f = 2170 MHz)
P1dB
60
W
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 60 W CW, IDQ = 500 mA,
f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
1. Part is internally matched both on input and output.
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