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參數資料
| 型號： | MRF21060S |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF MOSFET(射頻MOS場效應管) |
| 中文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 465A-06, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 126K |
| 代理商： | MRF21060S |
1
MRF21060 MRF21060R3 MRF21060S MRF21060SR3
MOTOROLA RF DEVICE DATA
Motorola, Inc. 2000
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications from frequencies up to
2.1 to 2.2 GHz. Suitable for W–CDMA, CDMA, TDMA, GSM and multicarrier
amplifier applications.
Typical W–CDMA Performance: 2140 MHz, 28 Volts
5 MHz Offset @ 4.096 MHz BW, 15 DTCH
Output Power — 6.0 Watts
Power Gain — 12.5 dB
Drain Efficiency — 15%
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection: Class 2 Human Body Model, Class M3
Machine Model
Ease of Design for Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 60 Watts (CW)
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Available in Tape and Reel. R3 Suffix = 250 Units in 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VGS
PD
65
Vdc
Gate–Source Voltage
+15, –0.5
Vdc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
180
0.98
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.02
°
C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF21060/D
SEMICONDUCTOR TECHNICAL DATA
2170 MHz, 60 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 465–04, STYLE 1
(MRF21060)
CASE 465A–04, STYLE 1
(MRF21060S)
REV 1
相關PDF資料 |
PDF描述 |
|---|---|
| MRF21090R3 | SEE A3422LKA-T |
| MRF21090 | RF Power Field Effect Transistors |
| MRF21090S | RF Power MOSFETs(RF功率MOS場效應管) |
| MRF21120 | RF Power MOSFETs(RF功率MOS場效應管) |
| MRF21125 | RF POWER FIELD EFFECT TRANSISTORS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF21060SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21085 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21085LR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21085LS | 制造商:Motorola Inc 功能描述: |
| MRF21085LSR3 | 功能描述:IC MOSFET RF N-CHAN NI-780S RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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