參數(shù)資料
型號(hào): MRF19120
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: RF Power MOSFETs(RF功率MOS場(chǎng)效應(yīng)管)
中文描述: 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-1230, CASE 375D-04, 5 PIN
文件頁數(shù): 6/12頁
文件大?。?/td> 178K
代理商: MRF19120
MRF19120 MRF19120S
6
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
Figure 3. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
8
10
Pout, OUTPUT POWER (WATTS) PEP
1.0
0.1
0.1
12
–20
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain, Efficiency, and IMD
versus Output Power
10
1.0
12
13
13
–40
10
100
1.0
8
10
100
11
I
–70
–20
–50
–30
–40
–30
–60
10
9
,
Gp
1.0
10
100
VDD = 26 Vdc
f1 = 1990.0 MHz
f2 = 1990.1 MHz
–50
–70
5
6
η
,
20
80
40
–40
–80
–60
I
0.1
100
,
Gp
500 mA
750 mA
1100 mA
1000 mA
1300 mA
VDD = 26 Vdc
f1 = 1990.0 MHz
f2 = 1990.1 MHz
1500 mA
–60
VDD = 26 Vdc
IDQ = 2 x 500 mA
f1 = 1990.0 MHz
f2 = 1990.1 MHz
0.1
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Power Gain, Efficiency, and ACPR
versus Output Power
10
12
14
1.0
8
10
4
6
η
,
–20
20
40
–40
–80
–60
0.1
100
,
G
9
11
7
0
–20
60
η
IMD
0
2
Gps
η
ACPR
2.25 MHz
1.25 MHz
885 kHz
500 mA
750 mA
1100 mA
1000 mA
1300 mA
1500 mA
3rd Order
5th Order
7th Order
Gps
VDD = 26 Vdc, IDQ = 2 x 750 mA, f = 1990 MHz
CDMA 9 Channels Forward, Pilot:0, Paging1, Traffic:8–13, Sync:32
885 kHz @ 30 kHz BW, 1.25 MHz @ 12.5 kHz BW,
2.25 MHz @ 1 MHz BW
I
VDD = 26 Vdc, IDQ = 2 x 500 mA
Two–Tone, 100 kHz Tone Spacing
13
f, FREQUENCY (MHz)
5
G
1930
10
1960
1975
11
8
1945
9
6
7
12
1990
,
p
Gps
η
IMD
VDD = 26 Vdc, IDQ = 2 x 500 mA
Two–Tone, 100 kHz Tone Spacing
Output Power = 120 W PEP
VSWR
η
,
50
45
40
35
–24
–26
–28
–30
–32
I
D
V
2
1
1.5
Figure 4. Class AB Broadband Circuit
Performance
Figure 5. Intermodulation Distortion
versus Output Power
Figure 6. Intermodulation Distortion
Products versus Output Power
相關(guān)PDF資料
PDF描述
MRF19120S RF Power MOSFETs(RF功率MOS場(chǎng)效應(yīng)管)
MRF21030 RF Power MOSFETs(RF功率MOS場(chǎng)效應(yīng)管)
MRF21030S RF Power MOSFETs(RF功率MOS場(chǎng)效應(yīng)管)
MRF373 The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF373S The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF19120S 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF19125 制造商:Freescale Semiconductor 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391
MRF19125R3 功能描述:IC MOSFET RF N-CHAN NI-880 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF19125R5 功能描述:IC MOSFET RF N-CHAN NI-880 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF19125S 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs