參數(shù)資料
型號: MRF186
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-860, CASE 375B-04, 5 PIN
文件頁數(shù): 4/8頁
文件大?。?/td> 948K
代理商: MRF186
MRF186
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
Figure 2. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
-60
-70
50
Figure 3. Intermodulation Distortion
versus Output Power
-60
10
Pout, OUTPUT POWER (WATTS) PEP
-25
-50
25
125
-35
0.1
0
Figure 4. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS)
11
Figure 5. Output Power versus Input Power
Pin, INPUT POWER (WATTS)
Figure 6. Output Power versus Supply Voltage
VDD, SUPPLY VOLTAGE (VOLTS)
32
16
10
60
140
-20
13
14
-50
5
40
75
100
1
100
24
12
0
150
38
-40
-30
-40
-30
16
12
15
0
140
80
20
60
100
120
100
Figure 7. Output Power versus Gate Voltage
VGS, GATE-SOURCE VOLTAGE (VOLTS)
5
1
80
140
3
0
40
20
120
-55
-45
10
P
24
TYPICAL DEVICE SHOWN
12.4
13.6
13.2
12.6
13.8
13.4
12.8
13
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
3rd Order
5th Order
7th Order
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
VDD = 28 V
f1 = 960.0 MHz
f2 = 960.1 MHz
IDQ = 800 mA
VDD = 28 V
f1 = 960.0 MHz
f2 = 960.1 MHz
IDQ = 200 mA
400 mA
1200 mA
800 mA
G ps
,POWER
GAIN
(dB)
IDQ = 1200 mA
400 mA
800 mA
200 mA
VDD = 28 V
f = 960 MHz
G ps
,POWER
GAIN
(dB)
η,
DRAIN
EFFICIENCY
(%)
out
,OUTPUT
POWER
(W
ATTS)
40
17
4
26
Gps
Pout
DRAIN EFFICIENCY
VDS = 28 V
f = 960 MHz
IDQ = 800 mA
P out
,OUTPUT
POWER
(W
ATTS)
120
80
20
28
14
18
26
22
30
f = 960 MHz
IDQ = 800 mA
Pin = 5.5 W
2 W
1 W
P out
,OUTPUT
POWER
(W
ATTS)
60
100
1.5
3.5
0.5
2.5
4.5
Pin = 5.5 W
f = 960 MHz
IDQ = 800 mA
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
Archived 2005
A
R
C
H
IV
E
D
2
0
5
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