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參數(shù)資料
| 型號(hào)： | MRF186 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-860, CASE 375B-04, 5 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 948K |
| 代理商： | MRF186 |
MRF186
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 50 Adc)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
1
Adc
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
ON CHARACTERISTICS (1)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 300 Adc Per Side)
VGS(th)
2.5
3
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 300 mAdc Per Side)
VGS(Q)
3.3
4.2
5
Vdc
Delta Gate Threshold Voltage (Side to Side)
(VDS = 28 V, ID = 300 mA Per Side)
VGS(Q)
—
0.3
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 3 Adc Per Side)
VDS(on)
—
0.58
0.7
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc Per Side)
gfs
2.4
2.8
—
S
DYNAMIC CHARACTERISTICS (1)
Input Capacitance (Per Side)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
177
—
pF
Output Capacitance (Per Side)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Coss
—
45
—
pF
Reverse Transfer Capacitance (Per Side)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
—
3.4
—
pF
FUNCTIONAL CHARACTERISTICS (In Motorola Test Fixture, 50 ohm system) (2)
Two–Tone Common Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz,
f2 = 960.1 MHz)
Gps
11
12.2
—
dB
Two–Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz,
f2 = 960.1 MHz)
η
30
35
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD
—
–32
–28
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL
9
16
—
dB
Two–Tone Common Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz,
f2 = 945.1 MHz)
Gps
—
12
—
dB
Two–Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz,
f2 = 945.1 MHz)
η
—
33
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz,
f2 = 945.1 MHz)
IMD
—
–32
—
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz,
f2 = 945.1 MHz)
IRL
—
16
—
dB
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2 x 400 mA,
f = 960 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Each side of device measured separately.
(2) Device measured in push–pull configuration.
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
Archived 2005
A
R
C
H
IV
E
D
2
0
5
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MRF187 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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| MRF187S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
| MRF187SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF19030 | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391VAR |
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