參數(shù)資料
型號: MRF182R1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CASE 360B-05, 3 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 3250K
代理商: MRF182R1
Archived 2005
A
R
C
H
IV
E
D
2
0
5
MRF182R1 MRF182SR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 A)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 50 mA)
VGS(Q)
3
4
5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 3 A)
VDS(on)
0.9
1.2
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 A)
gfs
1.6
1.8
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Ciss
56
pF
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Coss
28
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Crss
2.5
pF
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(VDD = 28 Vdc, Pout = 30 W, IDQ = 50 mA, f = 945 MHz)
Gps
11
14
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 30 W, IDQ = 50 mA, f = 945 MHz)
h
50
58
%
Load Mismatch
(VDD = 28 Vdc, Pout = 30 W, IDQ = 50 mA, f = 945 MHz,
Load VSWR 5:1 at All Phase Angles)
Ψ
No Degradation in Output Power
Series Equivalent Input Impedance
(VDD = 28 Vdc, Pout = 30 W, IDQ = 50 mA, f = 960 MHz)
Zin
0.81 + j1.6
ohms
Series Equivalent Output Impedance
(VDD = 28 Vdc, Pout = 30 W, IDQ = 50 mA, f = 960 MHz)
Zout
2.15 – j1.7
ohms
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
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