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參數(shù)資料
| 型號： | MRF184S |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 360C-03, 2 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 132K |
| 代理商： | MRF184S |
LIFETIME
BUY
LAST
ORDER
31JUL04
LAST
SHIP
31JAN05
5.2–175
MRF184 MRF184S, R1
MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA
The RF MOSFET Line
RF POWER Field-Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications at frequen-
cies to 1.0 GHz. The high gain and broadband performance of these devices
makes them ideal for large–signal, common source amplifier applications in 28
volt base station equipment.
Guaranteed Performance @ 945 MHz, 28 Volts
Output Power = 60 Watts
Power Gain = 11.5 dB
Efficiency = 53%
Characterized with Series Equivalent Large–Signal
Impedance Parameters
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
100% Tested for Load Mismatch Stress at all Phase
Angles with 5:1 VSWR @ 28 Vdc, 945 MHz, 60 Watts CW
MRF184S Available in Tape and Reel by Adding
R1 Suffix to Part Number. MRF184SR1 = 500 Units per
24 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
±20
Vdc
Drain Current — Continuous
ID
7
Adc
Total Device Dissipation @ TC = 70°C
Derate above 70
°C
PD
118
0.9
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.1
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 V, ID = 1 mAdc)
V(BR)DSS
65
–
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0 V)
IDSS
–
1
Adc
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0 V)
IGSS
–
1
Adc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF184
MRF184S, R1
60 W, 1.0 GHz
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–03, STYLE 1
(MRF184)
CASE 360C–03, STYLE 1
(MRF184S)
G
D
S
REV 7
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF184SR1 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF185 | 制造商:ASI 制造商全稱:ASI 功能描述:RF POWER MOSFET |
| MRF185_02 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFET |
| MRF186 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement?Mode Lateral MOSFET |
| MRF187 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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