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參數(shù)資料
| 型號(hào)： | MRF177 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | N-CHANNEL BROADBAND RF POWER MOSFET |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 744A-01, 8 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 186K |
| 代理商： | MRF177 |
1
MRF177
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF MOSFET Line
N–Channel Enhancement Mode MOSFET
Designed for broadband commercial and military applications up to 400 MHz
frequency range. Primarily used as a driver or output amplifier in push–pull
configurations. Can be used in manual gain control, ALC and modulation
circuits.
Typical Performance at 400 MHz, 28 V:
Output Power — 100 W
Gain — 12 dB
Efficiency — 60%
Low Thermal Resistance
Low Crss — 10 pF Typ @ VDS = 28 Volts
Ruggedness Tested at Rated Output Power
Nitride Passivated Die for Enhanced Reliability
Excellent Thermal Stability; Suited for Class A
Operation
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
ID
PD
65
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage
65
Vdc
±
40
Vdc
Drain Current — Continuous
16
Adc
Total Device Dissipation @ TC = 25
°
C (1)
Derate above 25
°
C
270
1.54
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
°
C
Operating Temperature Range
200
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction–to–Case
R
θ
JC
0.65
°
C/W
(1) Total device dissipation rating applies only when the device is operated as an RF push–pull amplifier.
NOTE —
CAUTION
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF177/D
SEMICONDUCTOR TECHNICAL DATA
100 W, 28 V, 400 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 744A–01, STYLE 2
2
1, 4
3
6
5, 8
7
REV 8
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