參數(shù)資料
型號(hào): MRF183S
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CASE 360C-04, 3 PIN
文件頁(yè)數(shù): 1/10頁(yè)
文件大?。?/td> 221K
代理商: MRF183S
1
MRF183 MRF183S
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral
MOSFETs
Designed for broadband commercial and industrial applications at frequen-
cies to 1.0 GHz. The high gain and broadband performance of these devices
makes ithem ideal for large–signal, common source amplifier applications in 28
volt base station equipment.
Guaranteed Performance at 945 MHz, 28 Volts
Output Power – 45 Watts PEP
Power Gain – 11.5 dB
Efficiency – 33%
IMD – 28 dBc
Characterized with Series Equivalent Large–Signal
Impedance Parameters
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
100% Tested for Load Mismatch Stress at all Phase Angles
with 5:1 VSWR @ 28 Vdc, 945 MHz, 45 Watts CW
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
ID
PD
65
Vdc
Drain–Gate Voltage (RGS = 1 Meg Ohm)
65
Vdc
Gate–Source Voltage
±
20
Vdc
Drain Current – Continuous
5
Adc
Total Device Dissipation @ TC = 70
°
C
Derate above 70
°
C
86
0.67
W
W/
°
C
Storage Temperature Range
Tstg
TJ
– 65 to +200
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.5
°
C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF183/D
SEMICONDUCTOR TECHNICAL DATA
45 W, 1.0 GHz
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–01, STYLE 1
(MRF183)
CASE 360C–03, STYLE 1
(MRF183S)
G
D
S
REV 6
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