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參數(shù)資料
| 型號(hào)： | MRF166W |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 412-01, 4 PIN |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 206K |
| 代理商： | MRF166W |
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 5.0 mA)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
0.5
mA
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0 Vdc)
IGSS
—
1.0
A
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS= 10 Vdc, ID = 25 mA)
VGS(th)
1.5
3.0
4.5
Vdc
Forward Transconductance
(VDS= 10 Vdc, ID = 1.5 A)
gfs
0.9
1.1
—
mS
DYNAMIC CHARACTERISTICS (1)
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Ciss
—
28
—
pF
Output Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Coss
—
30
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Crss
—
4.0
—
pF
FUNCTIONAL CHARACTERISTICS (2)
Common Source Power Gain
(VDD = 28 Vdc, Pout = 40 W, f = 500 MHz, IDQ = 100 mA)
Gps
14
16
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 40 W, f = 500 MHz, IDQ = 100 mA)
η
50
55
—
%
Electrical Ruggedness
(VDD = 28 Vdc, Pout = 40 W, f = 500 MHz, IDQ = 100 mA)
Load VSWR = 30:1, All phase angles at frequency of test
Ψ
No Degradation in Output Power
Series Equivalent Input Impedance
(VDD = 28 Vdc, Pout = 40 W, f = 500 MHz, IDQ = 100 mA)
Zin
—
2.88 –j7.96
—
Ohms
Series Equivalent Output Impedance
(VDD = 28 Vdc, Pout = 40 W, f = 500 MHz, IDQ = 100 mA)
Zout
—
6.12 –j9.43
—
Ohms
(1) Each transistor chip measured separately.
(2) Both transistor chips operating in a push–pull amplifier.
2
REV 3
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