參數(shù)資料
型號： MRF16030
元件分類： 功率晶體管
英文描述： L BAND, Si, NPN, RF POWER TRANSISTOR
封裝： CASE 395C-01, 2 PIN
文件頁數(shù)： 2/5頁
文件大?。?/td> 133K
代理商： MRF16030
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
V(BR)CES
55
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
55
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
4.0
—
Vdc
Collector Cutoff Current
(VCE = 28 Vdc, VBE = 0)
ICES
—
10
mAdc
ON CHARACTERISTICS
DC Current Gain
(ICE = 1.0 Adc, VCE = 5.0 Vdc)
hFE
20
35
80
—
FUNCTIONAL TESTS
Collector–Base Amplifier Power Gain
(VCC = 28 Vdc, Pout = 30 Watts, f = 1600/1640 MHz)
Gpe
7.5
7.7
—
dB
Collector Efficiency
(VCC = 28 Vdc, Pout = 30 Watts, f = 1600/1640 MHz)
η
40
45
—
%
Input Return Loss
(VCC = 28 Vdc, Pout = 30 Watts, f = 1600/1640 MHz)
IRL
8.0
—
dB
Output Mismatch Stress
VCC = 28 Vdc, Pout = 30 Watts, f = 1600 MHz, Load
VSWR = 3:1, All phase angles at frequency of test
Ψ
No Degradation in Output Power
2
REV 3
相關(guān)PDF資料
PDF描述
MRF160 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF163 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF164W 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF166C UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF166W 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF161 制造商:ASI 制造商全稱:ASI 功能描述:SILICON N-CHANNEL RF POWER MOSFET
MRF166 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:MOSFET BROADBAND RF POWER FETs
MRF166C 功能描述:射頻MOSFET電源晶體管 5-500MHz 20Watts 28Volt Gain 13.5dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF166W 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 65V 8A - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET
MRF171 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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