參數(shù)資料
型號: MRF154
元件分類: 功率晶體管
英文描述: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CASE 368-03, HOGPAC-2
文件頁數(shù): 3/7頁
文件大?。?/td> 175K
代理商: MRF154
P
,OUTPUT
POWER
(W
A
TTS)
out
Figure 2. Power Gain versus Frequency
Figure 3. Output Power versus Input Power
Figure 4. DC Safe Operating Area
Figure 5. Capacitance versus Drain Voltage
Figure 6. Gate Voltage versus Drain Current
Figure 7. Common Source Unity Gain Frequency
versus Drain Current
POWER
GAIN
(dB)
25
20
15
10
5
0
200
2
5
10
20
50
100
f, FREQUENCY (MHz)
VDD = 50 V
IDQ = 800 mA
Pout = 600 W
800
050
Pin, INPUT POWER (WATTS)
100
MHz
30
MHz
100
010
20
600
400
200
0
800
600
400
200
0
VDD = 50 V
40 V
VDD = 50 V
40 V
(IDQ = 800 mA)
I D
,DRAIN
CURRENT
(AMPS)
100
200
220
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
10
1
TC = 25°C
C,
CAP
ACIT
ANCE
(pF)
10,000
12
VDS, DRAIN VOLTAGE (VOLTS)
5000
2000
1000
500
200
100
5
10
20
50
100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
I DS
,DRAIN
CURRENT
(AMPS)
40
10
0
04
VGS, GATE–SOURCE VOLTAGE (VOLTS)
26
8
30
20
TYPICAL DEVICE SHOWN
VDS = 10 V
VGS(th) = 3.5 V
gfs = 24 mhos
f
,UNITY
GAIN
FREQUENCY
(MHz)
t
600
20
ID, DRAIN CURRENT (AMPS)
040
60
500
400
300
200
100
0
VDS = 30 V
15 V
3
REV 2
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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