參數(shù)資料
型號： MRF151A
元件分類： 功率晶體管
英文描述： VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CASE P-244, 4 PIN
文件頁數(shù)： 2/8頁
文件大小： 282K
代理商： MRF151A
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)
V(BR)DSS
125
—
Vdc
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)
IDSS
—
5.0
mAdc
Gate–Body Leakage Current (VGS = 20 V, VDS = 0)
IGSS
—
1.0
Adc
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
VGS(th)
1.0
3.0
5.0
Vdc
Drain–Source On–Voltage (VGS = 10 V, ID = 10 A)
VDS(on)
1.0
3.0
5.0
Vdc
Forward Transconductance (VDS = 10 V, ID = 5.0 A)
gfs
5.0
7.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Ciss
—
350
—
pF
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Coss
—
220
—
pF
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Crss
—
15
—
pF
FUNCTIONAL TESTS
Common Source Amplifier Power Gain, f = 30; 30.001 MHz
(VDD = 50 V, Pout = 150 W (PEP), IDQ = 250 mA)
f = 175 MHz
Gps
18
—
22
13
—
dB
Drain Efficiency
(VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
ID (Max) = 3.75 A)
η
40
45
—
%
Intermodulation Distortion (1)
(VDD = 50 V, Pout = 150 W (PEP), f = 30 MHz,
f2 = 30.001 MHz, IDQ = 250 mA)
IMD(d3)
IMD(d11)
—
–32
–60
–30
—
dB
Load Mismatch
(VDD = 50 V, Pout = 150 W (PEP), f1 = 30; 30.001 MHz,
IDQ = 250 mA, VSWR 30:1 at all Phase Angles)
ψ
No Degradation in Output Power
CLASS A PERFORMANCE
Intermodulation Distortion (1) and Power Gain
(VDD = 50 V, Pout = 50 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, IDQ = 3.0 A)
GPS
IMD(d3)
IMD(d9 – 13)
—
23
–50
–75
—
dB
NOTE:
1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
Figure 1. 30 MHz Test Circuit
C1 — 470 pF Dipped Mica
C2, C5, C6, C7, C8, C9 — 0.1
F Ceramic Chip or
Monolythic with Short Leads
C3 — 200 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C4 — 15 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C10 — 10
F/100 V Electrolytic
L1 — VK200/4B Ferrite Choke or Equivalent, 3.0
H
L2 — Ferrite Bead(s), 2.0
H
R1, R2 — 51
/1.0 W Carbon
R3 — 3.3
/1.0 W Carbon (or 2.0 x 6.8 /1/2 W in Parallel)
T1 — 9:1 Broadband Transformer Communication Concepts, Inc. RF800-9 material 43 or equiv.
T2 — 1:9 Broadband Transformer
Board Material — 0.062
″ Fiberglass (G10),
1 oz. Copper Clad, 2 Sides,
e r = 5
BIAS
0–12 V
+
–
+
–
C5
C6
C7
C8
C9
C10
50 V
C4
T2
D.U.T.
R3
T1
C2
R2
C1
C3
L1
RF
INPUT
L2
+
–
RF
OUTPUT
R1
2
REV 1
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