參數(shù)資料
型號: MRF141
元件分類: 功率晶體管
英文描述: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CASE 211-11, 4 PIN
文件頁數(shù): 4/10頁
文件大小: 205K
代理商: MRF141
I D
,DRAIN
CURRENT
(AMPS)
Figure 2. DC Safe Operating Area
Figure 3. Gate–Source Voltage versus
Case Temperature
Figure 4. Common Source Unity Gain Frequency
versus Drain Current
Figure 5. Capacitance versus
Drain–Source Voltage
Figure 6. Power Gain versus Frequency
Figure 7. Output Power versus Input Power
TYPICAL CHARACTERISTICS
30
25
20
15
10
5
20
10
100
200
0
12
345
200
0
5
10
15
20
25
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
f, FREQUENCY (MHz)
Pin, INPUT POWER (WATTS)
200
20
2000
1000
0
020
ID, DRAIN CURRENT (AMPS)
100
10
1
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
10
P out
,OUTPUT
POWER
(W
A
TTS)
f T
,UNITY
GAIN
FREQUENCY
(MHz)
VDD = 28 V
IDQ = 250 mA
Pout = 150 W
VDS = 20 V
10 V
0
5
10
15
20
25
G
f = 175 MHz
VDD = 28 V
IDQ = 250 mA
f = 30 MHz
VDD = 28 V
IDQ = 250 mA
26
8
12
16
18
14
410
– 25
100
TC, CASE TEMPERATURE (°C)
25
50
75
0
300
100
200
0
300
100
200
PS
,POWER
GAIN
(dB)
Coss
Ciss
Crss
TC = 25°C
1.04
1.03
1.02
1.01
1
0.99
0.98
0.97
0.96
0.95
0.94
0.93
0.92
0.91
0.9
C,
CAP
ACIT
ANCE
(pF)
V
GS
,GA
TE-SOURCE
VOL
TAGE
(NORMALIZED)
ID = 5 A
0.25 A
0.5 A
2 A
4 A
1 A
3
REV 9
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