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參數(shù)資料
| 型號： | MRF10005 |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, CASE 336E-02, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 160K |
| 代理商： | MRF10005 |
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0)
V(BR)CES
55
—
Vdc
Collector–Base Breakdown Voltage (IC = 25 mAdc, IE = 0)
V(BR)CBO
55
—
Vdc
Emitter–Base Breakdown Voltage (IE = 0.5 mAdc, IC = 0)
V(BR)EBO
3.5
—
Vdc
Collector Cutoff Current (VCB = 28 Vdc, IE = 0)
ICBO
—
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 500 mAdc, VCE = 5.0 Vdc)
hFE
20
—
100
—
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
7.0
10
pF
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz)
GPB
8.5
10.3
—
dB
Collector Efficiency
(VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz)
η
45
55
—
%
Load Mismatch
(VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz,
VSWR = 10:1 All Phase Angles)
ψ
No Degradation in Output Power
Figure 1. Test Circuit
C1, C2, C3 — 220 pF 100 mil Chip Capacitor
C4 — 0.1
F
C5 — 47
F/50 V Electrolytic
L1 — 3 turn #18 AWG, 1/8
″ ID, 0.18″ Long
Z1–Z10 — Microstrip, see details below
Board Material — 0.030
″ Glass Teflon,
2.0 oz. Copper,
εr = 2.55
RF
INPUT
RF
OUTPUT
Z10
C1
28 Vdc
+
-
D.U.T.
Z1
Z3
Z2
Z4
Z5
Z6
Z7
Z8
C3
C4
C5
+
L1
C2
Z9
0.050
0.25
0.20
0.050
0.40
0.90
0.37
0.70
0.13
0.080
0.50
0.20
0.660
0.275
0.16
0.25
0.375
0.57
0.40
0.25
0.08
2.365
1.385
1.125
0.650
0.30
0.000
0.00
0.20 0.30 0.40
0.70
1.45
1.91
1.96
2.365
2
REV 6
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF1000MB | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| MRF1000MB-MOT | 制造商:M/A-COM Technology Solutions 功能描述:MOT BIPOLAR *MOT DIE PRODUCT ONLY* - Bulk |
| MRF1001 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF1001A | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON HIGH FREQUENCY TRANSISTOR |
| MRF1002 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:MICROWAVE POWER TRANSISTORS |
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