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參數(shù)資料
| 型號： | MRA0510-50H |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | DIODES, 100V, 1A, DL4002 |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 60K |
| 代理商： | MRA0510-50H |
1
MRA0510–50H
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
Designed primarily for wideband, large–signal output and driver amplifier
stages in the 500 to 1000 MHz frequency range.
Designed for Class AB Linear Power Amplifiers
Specified 28 Volt, 1000 MHz Characteristics:
Output Power — 50 Watts
Power Gain — 7 dB (Min), Class AB
Built–In Matching Network for Broadband Operation
Gold Metallization for Improved Reliability
Diffused Ballast Resistors
Hermetic Package for Military/Space Applications
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
PD
30
Vdc
Collector–Base Voltage
60
Vdc
Emitter–Base Voltage
4
Vdc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
125
0.715
Watts
W/
°
C
Operating Junction Temperature
TJ
Tstg
200
°
C
Storage Temperature Range
–65 to +200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, RF, Junction to Case (TC = 70
°
C)
R
θ
JC
1.4
°
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Collector–Emitter Breakdown Voltage (IC = 25 mA, VBE = 0)
Collector–Base Breakdown Voltage (IC = 25 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0)
Collector–Emitter Breakdown Voltage (IC = 25 mA, RBE = 1
)
Collector Cutoff Current (VCB = 30 V, IE = 0)
(1) Each transistor chip measured separately.
V(BR)CES
V(BR)CBO
V(BR)EBO
V(BR)CER
ICBO
60
–
–
Vdc
60
–
–
Vdc
4
–
–
Vdc
50
–
–
Vdc
–
–
25
mAdc
(continued)
Order this document
by MRA0510–50H/D
SEMICONDUCTOR TECHNICAL DATA
7.0 dB, 500 – 1000 MHz
50 W
BROADBAND
UHF POWER TRANSISTOR
CASE 391–03, STYLE 1
(HLP–42)
REV 1
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