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| 型號： | MRA100014L |
| 廠商： | Motorola, Inc. |
| 英文描述： | UHF POWER TRANSISTOR |
| 中文描述： | 超高頻功率晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 51K |
| 代理商： | MRA100014L |
1
MRA1000–14L
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed primarily for wideband, large–signal output and driver amplifier
stages to 1000 MHz.
Designed for Class A Linear Power Amplifiers
Specified 19 Volt, 1000 MHz Characteristics:
Output Power — 14 Watts
Power Gain — 8.0 dB, Small–Signal
Built–In Matching Network for Broadband Operation
Gold Metallization for Improved Reliability
Diffused Ballast Resistors
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
PD
28
Vdc
Collector–Base Voltage
50
Vdc
Emitter–Base Voltage
3.5
Vdc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
83
0.48
Watts
W/
°
C
Operating Junction Temperature
TJ
Tstg
200
°
C
Storage Temperature Range
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (TC = 70
°
C)
R
θ
JC
2.1
°
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 25 mA, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 25 mA, VBE = 0)
Collector–Base Breakdown Voltage (IC = 25 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 5.0 mA, IC = 0)
Collector Cutoff Current (VCB = 19 V, IE = 0)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
28
—
—
Vdc
50
—
—
Vdc
50
—
—
Vdc
3.5
—
—
Vdc
—
—
20
mAdc
DC Current Gain (IC = 1.0 A, VCE = 5.0 V)
hFE
20
—
90
—
(continued)
Order this document
by MRA1000–14L/D
SEMICONDUCTOR TECHNICAL DATA
8.0 dB, TO 1000 MHz
14 WATTS BROADBAND
UHF POWER TRANSISTOR
CASE 145D–02, STYLE 1
(.380 SOE)
REV 6
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