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| 型號(hào)： | MR2A16A |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM(256K x 16-Bit 3.3V異步磁阻RAM) |
| 中文描述： | 256K x 16位的3.3V異步磁阻隨機(jī)存取內(nèi)存（256K x 16位3.3伏異步磁阻RAM）的 |
| 文件頁(yè)數(shù)： | 10/22頁(yè) |
| 文件大?。?/td> | 243K |
| 代理商： | MR2A16A |
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MR2A16A Data Sheet, Rev. 6
10
Freescale Semiconductor
Timing Specifications
Write Mode
Table 10. Write Cycle Timing 1 (W Controlled)
1, 2, 3, 4, 5
Parameter
Symbol
t
AVAV
t
AVWL
t
AVWH
t
AVWH
t
WLWH
t
WLEH
t
WLWH
t
WLEH
t
DVWH
t
WHDX
t
WLQZ
t
WHQX
t
WHAX
Min
35
0
18
20
Max
—
—
—
—
Unit
ns
ns
ns
ns
Write cycle time
6
Address set-up time
Address valid to end of write (G high)
Address valid to end of write (G low)
Write pulse width (G high)
15
—
ns
Write pulse width (G low)
15
—
ns
Data valid to end of write
Data hold time
Write low to data Hi-Z
7, 8, 9
Write high to output active
7, 8, 9
Write recovery time
10
0
0
3
12
—
—
12
—
—
ns
ns
ns
ns
ns
NOTES:
1
2
A write occurs during the overlap of E low and W low.
Due to product sensitivities to noise, power supplies must be properly grounded and decoupled and
bus contention conditions must be minimized or eliminated during read and write cycles.
If G goes low at the same time or after W goes low, the output will remain in a high-impedance state.
After W, E, or UB/LB has been brought high, the signal must remain in steady-state high for a minimum
of 2 ns.
The minimum time between E being asserted low in one cycle to E being asserted low in a subsequent
cycle is the same as the minimum cycle time allowed for the device.
All write cycle timings are referenced from the last valid address to the first transition address.
This parameter is sampled and not 100% tested.
Transition is measured
±
200 mV from steady-state voltage.
At any given voltage or temperature, t
WLQZ
max < t
WHQX
min.
3
4
5
6
7
8
9
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MR2A16A_1 | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR2A16ACMA35 | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線(xiàn)寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪(fǎng)問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| MR2A16ACMA35R | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線(xiàn)寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪(fǎng)問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| MR2A16ACTS35C | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR2A16ACYS35 | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線(xiàn)寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪(fǎng)問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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