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參數(shù)資料
| 型號： | MPSW3725D26Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 0K |
| 代理商： | MPSW3725D26Z |
MPSW3725
NPN Transistor
This device is designed for high current, low impedance line
driver applications. Sourced from Process 26.
Absolute Maximum Ratings
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current - Continuous
1.2
A
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
TA = 25°C unless otherwise noted
TO-226
C
B
E
1999 Fairchild Semiconductor Corporation
Symbol
Characteristic
Max
Units
MPSW3725
PD
Total Device Dissipation
Derate above 25
°C
1.0
8.0
W
mW/
°C
RθJC
Thermal Resistance, Junction to Case
125
°C/W
RθJA
Thermal Resistance, Junction to Ambient
50
°C/W
MPSW3725
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