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參數(shù)資料
| 型號： | MPSW06D26Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 24K |
| 代理商： | MPSW06D26Z |
MPSW06
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Sustaining Voltage*
IC = 1.0 mA, IB = 0
80
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100
A, I
C = 0
4.0
V
ICEO
Collector-Cutoff Current
VCE = 60 V, IB = 0
0.1
A
ICBO
Collector-Cutoff Current
VCB = 80 V, IE = 0
0.1
A
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
100
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 100 mA, IB = 10 mA
0.25
V
VBE(on)
Base-Emitter On Voltage
IC = 100 mA, VCE = 1.0 V
1.2
V
SMALL SIGNAL CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=8.324f Xti=3 Eg=1.11 Vaf=100 Bf=12.16K Ne=1.368 Ise=73.27f Ikf=.1096 Xtb=1.5 Br=11.1 Nc=2 Isc=0
Ikr=0 Rc=.25 Cjc=18.36p Mjc=.3843 Vjc=.75 Fc=.5 Cje=55.61p Mje=.3834 Vje=.75 Tr=72.15n Tf=516.1p Itf=.5
Vtf=4 Xtf=6 Rb=10)
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 2.0 V,
f = 100 MHz
100
MHz
NPN General Purpose Amplifier
(continued)
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相關代理商/技術參數(shù) |
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|---|---|
| MPSW06G | 功能描述:兩極晶體管 - BJT 500mA 80V 1W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW06RLRA | 功能描述:兩極晶體管 - BJT 500mA 80V 1W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW06RLRAG | 功能描述:兩極晶體管 - BJT 500mA 80V 1W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW10 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:One Watt High Voltage Transistor |
| MPSW13 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:One Watt Darlington Transistors(NPN Silicon) |
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