參數(shù)資料
型號(hào): MPSW06D27Z
廠(chǎng)商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): 小信號(hào)晶體管
英文描述: 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 24K
代理商: MPSW06D27Z
MPSW06
NPN General Purpose Amplifier
MPSW06
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
80
V
VCBO
Collector-Base Voltage
80
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Collector Current - Continuous
500
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 33. See
MPSA06 for characteristics.
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
Symbol
Characteristic
Max
Units
MPSW06
PD
Total Device Dissipation
Derate above 25
°C
1.0
8.0
W
mW/
°C
RθJC
Thermal Resistance, Junction to Case
125
°C/W
RθJA
Thermal Resistance, Junction to Ambient
50
°C/W
TO-226
C
B
E
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
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