- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96044 > MPSW05RLRE (ON SEMICONDUCTOR) 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF資料下載
參數(shù)資料
| 型號： | MPSW05RLRE |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-226AE, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 148K |
| 代理商： | MPSW05RLRE |
One Watt Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
MPSW05
MPSW06
Unit
Collector–Emitter Voltage
VCEO
60
80
Vdc
Collector–Base Voltage
VCBO
60
80
Vdc
Emitter–Base Voltage
VEBO
4.0
Vdc
Collector Current — Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
1.0
8.0
Watt
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
2.5
20
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
MPSW05
MPSW06
V(BR)CEO
60
80
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO
4.0
—
Vdc
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
MPSW05
(VCE = 60 Vdc, IB = 0)
MPSW06
ICES
—
0.5
Adc
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
MPSW05
(VCB = 60 Vdc, IE = 0)
MPSW06
ICBO
—
0.1
Adc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
—
0.1
Adc
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
October, 2001 – Rev. 2
903
Publication Order Number:
MPSW05/D
MPSW05
MPSW06
MPSW06 is a Preferred Device
CASE 29–10, STYLE 1
TO–92 (TO–226AE)
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MPSW05RL | 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSW06RL | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSW05ZL1 | 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSW06RLRE | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSW10RLRP | 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPSW06 | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW06_D26Z | 功能描述:兩極晶體管 - BJT NPN Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW06_D27Z | 功能描述:兩極晶體管 - BJT NPN Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW06_Q | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW06G | 功能描述:兩極晶體管 - BJT 500mA 80V 1W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復。