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參數(shù)資料
| 型號(hào)： | MPSL51RL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 600 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-226AA, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 168K |
| 代理商： | MPSL51RL |
Amplifier Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
–100
Vdc
Collector–Base Voltage
VCBO
–100
Vdc
Emitter–Base Voltage
VEBO
–4.0
Vdc
Collector Current — Continuous
IC
–600
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–100
—
Vdc
Collector–Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
V(BR)CBO
–100
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
V(BR)EBO
–4.0
—
Vdc
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
ICBO
—
–1.0
Adc
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
IEBO
—
–100
nAdc
1. Pulse Test: Pulse Width = 300
ms, Duty Cycle = 2.0%.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
896
Publication Order Number:
MPSL51/D
MPSL51
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER
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