參數(shù)資料
型號(hào)： MPSW01ARLRA
廠(chǎng)商： ON SEMICONDUCTOR
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝： CASE 29-10, TO-226AA, 3 PIN
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 58K
代理商： MPSW01ARLRA
Semiconductor Components Industries, LLC, 2005
June, 2005 Rev. 3
1
Publication Order Number:
MPSW01/D
MPSW01, MPSW01A
MPSW01A is a Preferred Device
One Watt High Current
Transistors
NPN Silicon
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
MPSW01
MPSW01A
VCEO
30
40
Vdc
Collector Base Voltage
MPSW01
MPSW01A
VCBO
40
50
Vdc
Emitter Base Voltage
VEBO
5.0
Vdc
Collector Current Continuous
IC
1000
mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25
°C
PD
1.0
8.0
mW
mW/
°C
Total Device Dissipation
@ TC = 25°C
Derate above 25
°C
PD
2.5
20
W
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
JunctiontoAmbient
RqJA
125
°C/W
Thermal Resistance,
JunctiontoCase
RqJC
50
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= PbFree Package
(Note: Microdot may be in either location)
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
MARKING DIAGRAMS
MPS
W01
AYWW
G
Preferred devices are recommended choices for future use
and best overall value.
TO92
(TO226AE)
CASE 2910
STYLE 1
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER
MPS
W01A
AYWW
G
MPSW01
MPSW01A
相關(guān)PDF資料
PDF描述
MPSW01ARLRM 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW01RL1 1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW01RLRP 1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW01AZL1 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW01RLRA 1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MPSW01ARLRAG 功能描述:兩極晶體管 - BJT 1A 50V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPSW01ARLRP 功能描述:兩極晶體管 - BJT 1A 50V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPSW01ARLRPG 功能描述:兩極晶體管 - BJT 1A 50V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPSW01G 功能描述:兩極晶體管 - BJT 1A 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPSW05 功能描述:兩極晶體管 - BJT 500mA 60V 1W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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