參數(shù)資料
型號(hào): MPSA75
廠商: MOTOROLA INC
元件分類: 小信號(hào)晶體管
英文描述: 1000000 SYSTEM GATE 1.5 VOLT FPGA
中文描述: 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 131K
代理商: MPSA75
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
MPSA75
MPSA77
Unit
Collector–Emitter Voltage
VCES
VEBO
IC
PD
–40
–60
Vdc
Emitter–Base Voltage
–10
Vdc
Collector Current — Continuous
–500
Adc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
625
5.0
mW
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
200
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –100
μ
Adc, VBE = 0)
MPSA75
MPSA77
V(BR)CES
–40
–60
Vdc
Collector–Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
MPSA75
MPSA77
V(BR)CBO
–40
–60
Vdc
Collector Cutoff Current
(VCB= –30 V, IE = 0)
(VCB = –50 V, IE = 0)
MPSA75
MPSA77
ICBO
–100
–100
nAdc
Collector Cutoff Current
(VCE = –30 V, VBE = 0)
(VCE = –50 V, VBE = 0)
MPSA75
MPSA77
ICES
–500
–500
nAdc
Emitter Cutoff Current (VEB = –10 Vdc)
ON CHARACTERISTICS
IEBO
–100
nAdc
DC Current Gain
(IC = –10 mA, VCE = –5.0 V)
(IC = –100 mA, VCE = –5.0 V)
hFE
10,000
10,000
Collector–Emitter Saturation Voltage (IC = –100 mA, IB = –0.1 mAdc)
Base–Emitter On Voltage (IC = –100 mA, VCE = –5.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
VCE(sat)
VBE
–1.5
Vdc
–2.0
Vdc
Current–Gain — High Frequency (IC = –10 mA, VCE = –5.0 V, f = 100 MHz)
|hfe|
1.25
2.4
Order this document
by MPSA75/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
23
COLLECTOR 3
BASE
2
EMITTER 1
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