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參數(shù)資料
| 型號(hào)： | MPSA77 |
| 廠商： | KEC Holdings |
| 元件分類： | FPGA |
| 英文描述： | 1000000 SYSTEM GATE 1.5 VOLT FPGA |
| 中文描述： | 外延平面PNP晶體管（達(dá)林頓晶體管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 131K |
| 代理商： | MPSA77 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
MPSA75
MPSA77
Unit
Collector–Emitter Voltage
VCES
VEBO
IC
PD
–40
–60
Vdc
Emitter–Base Voltage
–10
Vdc
Collector Current — Continuous
–500
Adc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
625
5.0
mW
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
200
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –100
μ
Adc, VBE = 0)
MPSA75
MPSA77
V(BR)CES
–40
–60
—
—
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
MPSA75
MPSA77
V(BR)CBO
–40
–60
—
—
—
—
Vdc
Collector Cutoff Current
(VCB= –30 V, IE = 0)
(VCB = –50 V, IE = 0)
MPSA75
MPSA77
ICBO
—
—
—
—
–100
–100
nAdc
Collector Cutoff Current
(VCE = –30 V, VBE = 0)
(VCE = –50 V, VBE = 0)
MPSA75
MPSA77
ICES
—
—
—
—
–500
–500
nAdc
Emitter Cutoff Current (VEB = –10 Vdc)
ON CHARACTERISTICS
IEBO
—
—
–100
nAdc
DC Current Gain
(IC = –10 mA, VCE = –5.0 V)
(IC = –100 mA, VCE = –5.0 V)
hFE
10,000
10,000
—
—
—
—
—
Collector–Emitter Saturation Voltage (IC = –100 mA, IB = –0.1 mAdc)
Base–Emitter On Voltage (IC = –100 mA, VCE = –5.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
VCE(sat)
VBE
—
—
–1.5
Vdc
—
—
–2.0
Vdc
Current–Gain — High Frequency (IC = –10 mA, VCE = –5.0 V, f = 100 MHz)
|hfe|
1.25
2.4
—
—
Order this document
by MPSA75/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
23
COLLECTOR 3
BASE
2
EMITTER 1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPSA77_D26Z | 功能描述:達(dá)林頓晶體管 PNP Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSA77_D74Z | 功能描述:達(dá)林頓晶體管 PNP Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSA77_D75Z | 功能描述:達(dá)林頓晶體管 PNP Darl Transistor RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSA77_Q | 功能描述:達(dá)林頓晶體管 PNP Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSA77D26Z | 制造商:Fairchild Semiconductor Corporation 功能描述:Trans Darlington PNP 60V 1.2A 3-Pin TO-92 T/R |
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