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參數(shù)資料
| 型號(hào)： | MPSA56 |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 107K |
| 代理商： | MPSA56 |
MPSA55 ... MPSA56
MPSA55 ... MPSA56
PNP
General Purpose Si-Epitaxial PlanarTransistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
PNP
Version 2006-07-25
Dimensions - Mae [mm]
Power dissipation
Verlustleistung
625 mW
Plastic case
Kunststoffgehuse
TO-92
(10D3)
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
MPSA55
MPSA56
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
B open
- VCEO
60 V
80 V
Collector-Base-voltage – Kollektor-Basis-Spannung
E open
- VCBO
60 V
80 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
- VEBO
4 V
Power dissipation – Verlustleistung
Ptot
625 mW 1)
Collector current – Kollektorstrom (dc)
- IC
500 mA
Peak Collector current – Kollektor-Spitzenstrom
- ICM
1 A
Peak Base current – Basis-Spitzenstrom
- IBM
200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhltnis 2)
- IC = 10 mA, - VCE = 1 V
- IC = 100 mA, - VCE = 1 V
hFE
100
–
Collector-Emitter saturation voltage – Kollektor-Emitter-Sttigungsspg. 2)
- IC = 100 mA, - IB = 10 mA
- VCEsat
––
0.25 V
Base-Emitter voltage – Basis-Emitter-Spannung 2)
- IC = 100 mA, - VCE = 1 V
- VBE
–
1.2 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 60 V, (E open)
- VCB = 80 V, (E open)
MPSA55
MPSA56
- ICBO
–
100 nA
1
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrhte in 2 mm Abstand vom Gehuse auf Umgebungstemperatur gehalten werden
2
Tested with pulses tp = 300 s, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 s, Schaltverhltnis ≤ 2%
Diotec Semiconductor AG
http://www.diotec.com/
1
16
18
9
2 x 2.54
E BC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS-A56 | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS |
| MPSA56 DIE | 制造商:Microchip Technology Inc 功能描述: |
| MPSA56 T/R | 功能描述:兩極晶體管 - BJT TRANS HV TAPE RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA56,116 | 功能描述:兩極晶體管 - BJT TRANS HV TAPE RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA56\E6 | 功能描述:兩極晶體管 - BJT REORD 512-MPSA56 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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