參數(shù)資料
型號(hào): MPSA56
元件分類: 小信號(hào)晶體管
英文描述: 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: TO-92, 3 PIN
文件頁數(shù): 1/1頁
文件大?。?/td> 26K
代理商: MPSA56
1999. 11. 30
1/1
SEMICONDUCTOR
TECHNICAL DATA
MPSA56
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
AUDIO FREQUENCY AMPLIFIER APPLICATIONS.
FEATURES
Complementary to MPSA06.
MAXIMUM RATING (Ta=25
)
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1
2
3
B
A
J
K
G
H
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
3. COLLECTOR
2. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=-80V, IE=0
-
-100
nA
Emitter Cut-off Current
ICEO
VCE=-60V, IB=0
-
-100
nA
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-1mA, IB=0
-80
-
V
DC Current Gain
hFE(1)
VCE=-1V, IC=-10mA
100
-
hFE(2)
VCE=-1V, IC=-100mA
100
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-100mA, IB=-10mA
-
-0.25
V
Base-Emitter Voltage
VBE
VCE=-1V, IC=-100mA
-
-1.2
V
Transition Frequency
fT
VCE=-1V, IE=0, IC=-100mA
50
-
MHz
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-80
V
Collector-Emitter Voltage
VCEO
-80
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-500
mA
Emitter Current
IE
500
mA
Collector Power Dissipation
PC
625
mW
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55
150
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MPS-A56 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS
MPSA56 DIE 制造商:Microchip Technology Inc 功能描述:
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MPSA56,116 功能描述:兩極晶體管 - BJT TRANS HV TAPE RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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