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參數(shù)資料
| 型號(hào)： | MPSA43D27Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 294K |
| 代理商： | MPSA43D27Z |
NPN High Voltage Amplifier
This device is designed for application as a video output to
drive color CRT and other high voltage applications. Sourced
from Process 48. See MPSA42 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
MPSA43
MMBTA43
Symbol
Characteristic
Max
Units
MPSA43
*MMBTA43
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
°C/W
Symbol
Parameter
Value
Units
VCES
Collector-Emitter Voltage
200
V
VCBO
Collector-Base Voltage
200
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current - Continuous
200
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
MPSA43
/
MMBTA43
C
B
E
TO-92
C
B
E
SOT-23
Mark: 1E
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
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| MPSA43G | 功能描述:兩極晶體管 - BJT 500mA 200V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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