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參數(shù)資料
| 型號： | MPSA43D74Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 26K |
| 代理商： | MPSA43D74Z |
2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
MPS
A
4
3
TO-92
Absolute Maximum Ratings * T
A=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T
A=25°C unless otherwise noted
* Pulse Test: Pulse Width
≤ 300s, Duty Cycle ≤ 2.0%
Thermal Characteristics T
A=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCES
Collector-Emitter Voltage
200
V
VCBO
Collector-Base Voltage
200
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current
- Continuous
200
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ +150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown Voltage *
IC = 1.0mA, IB = 0
200
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100A, IE = 0
200
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IC = 100A, IC = 0
6.0
V
ICBO
Collector Cutoff Current
VCB = 160V, IE = 0
0.1
A
IEBO
Emitter Cutoff Current
VEB = 4.0V, IC = 0
0.1
A
On Characteristics *
hFE
DC Current Gain
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 30mA, VCE = 10V
25
40
50
200
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 20mA, IB = 2.0mA
0.4
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 20mA, IB = 2.0mA
0.9
V
Small Signal Characteristics *
fT
Current Gain Dandwidth Product
IC = 10mA, VCE = 20V, f = 100MHz
50
MHz
Ccb
Collector-Base Capacitance
VCB = 20V, IE = 0, f = 1.0MHz
4.0
pF
Symbol
Parameter
Max.
Units
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
MPSA43
NPN High Voltage Amplifier
This device is designed for application as a video output to drive color
CRT and other high voltage applications.
Sourced from process 48.
See MPSA42 for characteristics.
1. Emitter 2. Base 3. Collector
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPSA43DA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 200V V(BR)CEO | CHIP |
| MPSA43DB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 200V V(BR)CEO | CHIP |
| MPSA43DC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 200V V(BR)CEO | CHIP |
| MPSA43G | 功能描述:兩極晶體管 - BJT 500mA 200V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA43G-AB3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR |
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