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參數(shù)資料
| 型號： | MPSA43 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 233K |
| 代理商： | MPSA43 |
1999. 11. 30
1/2
SEMICONDUCTOR
TECHNICAL DATA
MPSA42/43
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
HIGH VOLTAGE APPLICATION.
TELEPHONE APPLICATION.
FEATURES
Complementary to MPSA92/93.
MAXIMUM RATING (Ta=25
)
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1
2
3
B
A
J
K
G
H
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
3. COLLECTOR
2. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Base
Breakdown Voltage
MPSA42
V(BR)CBO
IC=100 A, IE=0
300
-
V
MPSA43
200
-
Collector-Emitter
Breakdown Voltage
MPSA42
V(BR)CEO
IC=1.0mA, IB=0
300
-
V
MPSA43
200
-
Collector Cut-off
Current
MPSA42
ICBO
VCB=200V, IE=0
-
0.1
A
MPSA43
VCB=160V, IE=0
-
0.1
Emitter Cut-off
Current
MPSA42
IEBO
VEB=6V, IC=0
-
0.1
A
MPSA43
VEB=4V, IC=0
-
0.1
DC Current Gain
* hFE
IC=1.0mA, VCE=10V
40
-
IC=10mA, VCE=10V
40
-
IC=30mA, VCE=10V
40
-
Collector-Emitter Saturation Voltage
* VCE(sat)
IC=20mA, IB=2.0mA
-
0.5
V
Base-Emitter Saturation Voltage
* VBE(sat)
IC=20mA, IB=2.0mA
-
0.9
V
Transition Frequency
fT
VCE=20V, IC=10mA, f=100MHz
50
-
MHz
Collector Output
Capacitance
MPSA42
Cob
VCB=20V, IE=0, f=1MHz
-
3.0
pF
MPSA43
-
4.0
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base
Voltage
MPSA42
VCBO
300
V
MPSA43
200
Collector-Emitter
Voltage
MPSA42
VCEO
300
V
MPSA43
200
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
500
mA
Emitter Current
IE
-500
mA
Collector Power Dissipation
PC
625
mW
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
150
*Pulse Test : Pulse Width
300 S, Duty Cycle
2.0%
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MPS-A43 | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:NPN SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
| MPSA43,116 | 功能描述:兩極晶體管 - BJT TRANS GP TAPE RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA43 | 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor |
| MPSA43_02 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN High Voltage Amplifier |
| MPSA43_D26Z | 功能描述:兩極晶體管 - BJT NPN Transistor High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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