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參數(shù)資料
| 型號： | MPSA13 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 164K |
| 代理商： | MPSA13 |
2000. 2. 26
1/2
SEMICONDUCTOR
TECHNICAL DATA
MPSA13/14
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATIONS.
DARLINGTON TRANSISTOR.
MAXIMUM RATING (Ta=25
)
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1
2
3
B
A
J
K
G
H
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
3. COLLECTOR
2. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Breakdown Voltage
VCES
IC=0.1mA
30
-
V
Emitter Cut-off Current
ICBO
VCB=30V
-
100
nA
Emitter Cut-off Current
IEBO
VEB=10V
-
100
nA
DC Current Gain
MPSA13
hFE
IC=10mA, VCE=5V
5,000
-
MPSA14
10,000
-
MPSA13
IC=100mA, VCE=5V
10,000
-
MPSA14
20,000
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=100mA, IB=0.1mA
-
1.5
V
Base-Emitter Voltage
VBE
IC=100mA, VCE=5V
-
2.0
V
Current Gain Bandwith Product
fT
IC=10mA, f=100MHz, VCE=5V
125
-
MHz
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCES
30
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
500
mA
Collector Power Dissipation
PC
625
mW
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
150
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MPS-A13 | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
| MPSA13 D75Z | 制造商:Fairchild Semiconductor Corporation 功能描述:Trans Darlington NPN 30V 1.2A 3-Pin TO-92 Ammo |
| MPSA13/KSP13 | 功能描述:達林頓晶體管 TO92,NPN,0.5A,30V Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSA13/KSP13-T | 功能描述:兩極晶體管 - BJT NPN 0.5A 30V Darling RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA13_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Darlington Transistor |
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