- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄96021 > MPSA13 (LITE-ON SEMICONDUCTOR CORP) 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF資料下載
參數(shù)資料
| 型號(hào)： | MPSA13 |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 20K |
| 代理商： | MPSA13 |
DS11111 Rev. G-3
1 of 1
MPSA13 / MPSA14
MPSA13 / MPSA14
NPN DARLINGTON TRANSISTOR
Characteristic
Symbol
MPSA13
MPSA14
Unit
Collector - Emitter Voltage
VCES
30
V
Collector - Base Voltage
VCBO
30
V
Emitter - Base Voltage
VEBO
10
V
Collector Current (continuous)
IC
500
mA
Total Power Dissipation
(Note 1)
Pd
625
mW
Thermal Resistance, Junction to Ambient
(Note 1)
RθJA
200
K/W
Thermal Resistance, Junction to Case
RθJC
83.3
K/W
Operating and Storage Temperature Range
Tj,TSTG
-55 to +150
°C
Maximum Ratings @ TA = 25°C unless otherwise specified
High Current Gains
Monolithic Construction
Available in Both Through-Hole and
Surface Mount Packages
Features
Mechanical Data
D
CB E
H
BOTTOM
VIEW
E
A
B
C
G
TO-92
Dim
Min
Max
A
4.32
4.83
B
4.32
4.78
C
12.50
15.62
D
0.36
0.56
E
3.15
3.94
G
2.29
2.79
H
1.14
1.40
All Dimensions in mm
Case: TO-92, Molded Plastic
Leads: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: Type Number
Weight: 0.18 grams (approx.)
Notes:
1. Leads maintained at a distance of 2.0 mm from body at specified ambient temperature.
2. Pulse test: Pulse width
≤ 300s, duty cycle ≤ 2%.
Characteristic
Symbol
Min
A13
Max
A13
Min
A14
Max
A14
Unit
Test Condition
Collector to Emitter Breakdown Voltage
V(BR)CES
30
30
V
IC = 100
A, IB = 0
Collector Cutoff Current
ICBO
100
100
nA
VCB = 30V, IE = 0
Emitter Cutoff Current
IEBO
100
100
nA
VEB = 10V, IC = 0
DC Current Gain
hFE
5,000
10,000
10,000
20,000
IC = 10mA, VCE = 5.0V
IC = 100mA, VCE = 5.0V
Collector-Emitter Saturation Voltage (Note 2)
VCE(SAT)
1.5
1.5
V
IC = 100mA, IB = 0.1mA
Base-Emitter “ON” Voltage (Note 2)
VBE(ON)
2.0
2.0
V
IC = 100mA,VCE = 5.0V
Current Gain Bandwidth Product
fT
125
125
MHz
IC = 10mA, VCE = 5.0V
f = 100MHz
Electrical Characteristics Continued @ TA = 25°C unless otherwise specified
POWER SEMICONDUCTOR
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MPSA14,116 | 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSA14-T/R | 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSA14-18 | 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MPSA13-5 | 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MPSA14-AMMO | 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS-A13 | 制造商:MICRO-ELECTRONICS 制造商全稱(chēng):Micro Electronics 功能描述:SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
| MPSA13 D75Z | 制造商:Fairchild Semiconductor Corporation 功能描述:Trans Darlington NPN 30V 1.2A 3-Pin TO-92 Ammo |
| MPSA13/KSP13 | 功能描述:達(dá)林頓晶體管 TO92,NPN,0.5A,30V Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSA13/KSP13-T | 功能描述:兩極晶體管 - BJT NPN 0.5A 30V Darling RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA13_05 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:NPN Darlington Transistor |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。