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參數(shù)資料
| 型號： | MPSA06 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Amplifier Transistors Voltage and Current are Negative for PNP Transistors(NPN通用放大器) |
| 中文描述： | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-11, TO-226, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 81K |
| 代理商： | MPSA06 |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 2
1
Publication Order Number:
MPSA05/D
(NPN) MPSA05, MPSA06*,
(PNP) MPSA55, MPSA56*
*Preferred Devices
Amplifier Transistors
Voltage and Current are Negative
for PNP Transistors
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
MPSA05, MPSA55
MPSA06, MPSA56
V
CEO
60
80
Vdc
CollectorBase Voltage
MPSA05, MPSA55
MPSA06, MPSA56
V
CBO
60
80
Vdc
EmitterBase Voltage
V
EBO
4.0
Vdc
Collector Current Continuous
I
C
500
mAdc
Total Device Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
P
D
625
5.0
W
mW/
°
C
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
1.5
12
W
mW/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
(Note 1)
R
JA
200
°
C/W
Thermal Resistance, JunctiontoCase
R
JC
83.3
°
C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. R
JA
is measured with the device soldered into a typical printed circuit board.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred
devices are recommended choices for future use
and best overall value.
MPSAxx = Device Code
xx = 05, 06, 55 or 56
A
= Assembly Location
Y
= Year
WW
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
STYLE 1
MPSA05, MPSA06
NPN
COLLECTOR
3
2
BASE
1
EMITTER
STYLE 1
MPSA55, MPSA56
PNP
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
TO92
CASE 2911
STYLE 1
1
23
MARKING DIAGRAM
MPS
Axx
AYWW
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS-A06 | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:COMPLEMENTRAY SILICON AF MEDIUM POWER TRANSISTORS |
| MPSA06 T/R | 功能描述:開關(guān)晶體管 - 偏壓電阻器 TRANS GP TAPE RADIAL RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MPSA06,116 | 功能描述:兩極晶體管 - BJT TRANS GP TAPE RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA06,126 | 功能描述:兩極晶體管 - BJT TRANS GP AMMO RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA06,412 | 功能描述:兩極晶體管 - BJT TRANS GP BULK STR LEAD RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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