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參數(shù)資料
| 型號： | MPSA05 |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 20K |
| 代理商： | MPSA05 |
DS11104 Rev. G-3
1 of 1
MPSA05 / MPSA06
MPSA05 / MPSA06
NPN SMALL SIGNAL TRANSISTOR
Features
Epitaxial Planar Die Construction
High Transition Frequency
Recommended for Driver and Low-Power
Output Stages
Characteristic
Symbol
MPSA05
MPSA06
Unit
Collector-Base Voltage
MPSA05
MPSA06
VCBO
60
80
V
Collector-Emitter Voltage
MPSA05
MPSA06
VCEO
60
80
V
Emitter-Base Voltage
VEBO
4.0
V
Collector Current (continuous)
(Note 1)
IC
500
mA
Power Dissipation
(Note 1)
Pd
625
mW
Thermal Resistance, Junction to Ambient
(Note 1)
RθJA
200
K/W
Thermal Resistance, Junction to Case
RθJC
83.3
K/W
Operating and Storage Temperature Range
Tj,TSTG
-55 to +150
°C
Notes:
1.
Valid provided that leads at a distance of 2.0mm from case are kept at specified ambient temperature.
2.
Pulse Test: Pulse width
≤ 300s, duty cycle ≤ 2%.
Maximum Ratings
@ TA = 25
°C unless otherwise specified
Case: TO-92, Plastic
Leads: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: Type Number
Weight: 0.18 grams (approx.)
Mechanical Data
D
CB E
H
BOTTOM
VIEW
E
A
B
C
G
TO-92
Dim
Min
Max
A
4.32
4.83
B
4.32
4.78
C
12.50
15.62
D
0.36
0.56
E
3.15
3.94
G
2.29
2.79
H
1.14
1.40
All Dimensions in mm
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Conditions
Collector-Emitter Breakdown Voltage
MPSA05
MPSA06
V(BR) CEO
60
80
V
IC = 1.0mA, IB =0
Emitter-Base Breakdown Voltage
V(BR)EBO
4.0
V
IE = 100A, IC = 0
Collector Cutoff Current
ICEO
0.1
A
VCE = 60V, IB = 0
Collector Cutoff Current
MPSA05
MPSA06
ICBO
0.1
A
VCB = 60V, IE = 0
VCB = 80V, IE = 0
DC Current Gain
hFE
50
VCE = 1.0V, IC = 10mA
VCE = 1.0V, IC = 100mA
Collector Saturation Voltage (Note 2)
VCE(SAT)
0.25
V
IC = 100mA, IB = 10mA
Base-Emitter ON-Voltage
VBE(ON)
1.2
V
VCE = 1.0V, IC = 100mA
Gain Bandwidth Product
T
100
MHz
VCE = 2.0V, IC = 10mA,
f = 100MHz
POWER SEMICONDUCTOR
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MPSA05 | 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSA05 | 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSA06 | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSA05 | 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSA06-18 | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS-A05 | 制造商:ON Semiconductor 功能描述: |
| MPSA05 D27Z | 制造商:Fairchild Semiconductor Corporation 功能描述:BIPOLAR TRANSISTOR NPN 60V TO-92 |
| MPSA05_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Amplifier Transistors Voltage and Current are Negative for PNP Transistors |
| MPSA05_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Amplifier Transistors |
| MPSA05_D26Z | 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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