- 您現(xiàn)在的位置：買賣IC網 > PDF目錄96013 > MPS8550D74Z (FAIRCHILD SEMICONDUCTOR CORP) 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF資料下載
參數資料
| 型號： | MPS8550D74Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 311K |
| 代理商： | MPS8550D74Z |
3
MPS8550
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
ON CHARACTERISTICS
V(BR)CEO
Collector-Emitter Sustaining Voltage*
IC = 30 mA, IB = 025V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100
A, I
E = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100
A, I
C = 0
6.0
V
ICBO
Collector-Cutoff Current
VCB = 35 V, IE = 0
0.1
A
ICES
Colector-Cutoff Current
VCE = 20 V, IE = 0
75
nA
hFE
DC Current Gain
IC = 5.0 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 800 mA, VCE = 1.0 V
45
85
40
300
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 800 mA, IB = 80 mA
0.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 800 mA, IB = 80 mA
1.2
V
Typical Characteristics
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Typical Puls ed Current Gain
vs Collector Current
110
100
1000
100
200
300
400
500
600
I
- COLLECTOR CURRENT (A)
h
-
TY
P
IC
A
L
P
U
LS
E
D
C
U
R
E
N
T
G
A
IN
FE
- 40 °C
C
V
= 1V
CE
125 °C
25 °C
Collector-Emitt er Saturation
Voltage vs Collector Current
10
100
1000
0
0.2
0.4
0.6
0.8
I - COLLECTOR CURRE NT (mA)
V
-
C
O
L
EC
T
O
R
EM
IT
T
E
R
VO
L
T
A
G
E
(V
)
C
CE
S
A
T
β = 10
- 40 °C
125 °C
25 °C
Base-Emitt er Saturation
Voltage vs Collect or Current
1
10
100
1000
0.4
0.6
0.8
1
1.2
I - COLLECTOR CURRE NT (mA)
V
-
B
A
S
E
M
IT
T
E
R
V
O
L
T
A
G
E
(
V
)
C
BE
S
A
T
β = 10
- 40 °C
125 °C
25 °C
Base Emitter ON Voltage vs
Collector Current
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V
-BA
S
E
M
IT
T
E
R
O
N
V
O
L
T
A
G
E
(
V
)
C
BE
(O
N)
V
= 1V
CE
- 40 °C
125 °C
25 °C
相關PDF資料 |
PDF描述 |
|---|---|
| MPS8550D26Z | 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS8550D75Z | 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS8550J18Z | 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MPS8550D | 1500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS8550C | 1500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MPS8550S | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT) |
| MPS8598 | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS8598_Q | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS8598G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Amplifier Transistors Voltage and Current are Negative for PNP Transistors |
| MPS8598RLRA | 功能描述:兩極晶體管 - BJT 500mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復。