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參數(shù)資料
| 型號： | MPS8550D75Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 311K |
| 代理商： | MPS8550D75Z |
MPS8550
PNP General Purpose Amplifier
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
MPS8550
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
25
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current - Continuous
800
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
This device is designed for general purpose audio amplifier applications
at collector currents to 500 mA. Sourced from Process 60.
C
B
E
TO-92
1997 Fairchild Semiconductor Corporation
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
MPS8550
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| MPS8550J18Z | 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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| MPS8550C | 1500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS8550B | 1500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS8550S-D | 1500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| MPS8550S | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT) |
| MPS8598 | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS8598_Q | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS8598G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Amplifier Transistors Voltage and Current are Negative for PNP Transistors |
| MPS8598RLRA | 功能描述:兩極晶體管 - BJT 500mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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