參數(shù)資料
型號(hào)： MPS3906
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： General Purpose Transistor(PNP Silicon)
中文描述： 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝： CASE 29-04, TO-226AA, 3 PIN
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 433K
代理商： MPS3906
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
–40
Vdc
Collector–Base Voltage
–40
Vdc
Emitter–Base Voltage
–5.0
Vdc
Collector Current — Continuous
–200
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
625
5.0
mW
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
1.5
12
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
RJC
200
°
C/W
Thermal Resistance, Junction to Case
83.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–40
—
Vdc
Collector–Base Breakdown Voltage
(IC = –10 Adc, IE = 0)
V(BR)CBO
–40
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –10 Adc, IC = 0)
V(BR)EBO
–5.0
—
Vdc
Collector Cutoff Current
(VCE = –30 Vdc, VEB(off) = –3.0 Vdc)
ICEX
—
–50
nAdc
Base Cutoff Current
(VCE = –30 Vdc, VEB(off) = –3.0 Vdc)
IBL
—
–50
nAdc
1. Pulse Test: Pulse Width = 300 s; Duty Cycle = 2.0%.
Order this document
by MPS3906/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
23
COLLECTOR
3
2
BASE
1
EMITTER
REV 1
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