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參數(shù)資料
| 型號： | MPSW55 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | One Watt Amplifier Transistors(PNP Silicon) |
| 中文描述： | 500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-10, TO-226AE, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 141K |
| 代理商： | MPSW55 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
MPSW55
MPSW56
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
–60
–80
Vdc
Collector–Base Voltage
–60
–80
Vdc
Emitter–Base Voltage
–4.0
Vdc
Collector Current — Continuous
–500
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
1.0
8.0
Watt
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
2.5
20
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
RJC
125
°
C/W
Thermal Resistance, Junction to Case
50
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = –1.0 mAdc, IB = 0)
MPSW55
MPSW56
V(BR)CEO
–60
–80
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –100 Adc, IC = 0)
V(BR)EBO
–4.0
—
Vdc
Collector Cutoff Current
(VCE = –40 Vdc, IB = 0)
(VCE = –60 Vdc, IB = 0)
MPSW55
MPSW56
ICES
—
—
–0.5
–0.5
μ
Adc
Collector Cutoff Current
(VCB = –40 Vdc, IE = 0)
(VCB = –60 Vdc, IE = 0)
MPSW55
MPSW56
ICBO
—
—
–0.1
–0.1
μ
Adc
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
IEBO
—
–0.1
μ
Adc
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPSW55/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
1
23
COLLECTOR
3
2
BASE
1
EMITTER
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MPSW55_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:One Watt Amplifier Transistors |
| MPSW55G | 功能描述:兩極晶體管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW55RLRA | 功能描述:兩極晶體管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW55RLRAG | 功能描述:兩極晶體管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW56 | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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