參數(shù)資料
型號: MPS3638AG
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: CASE 29-11, TO-226AA, 3 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 148K
代理商: MPS3638AG
MPS3638A
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(2)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 300 mAdc, VCE = 2.0 Vdc)
hFE
80
100
20
CollectorEmitter Saturation Voltage
(IC = 50 mAdc, IB = 2.5 mAdc)
(IC = 300 mAdc, IB = 30 mAdc)
VCE(sat)
0.25
1.0
Vdc
Base Emitter Saturation Voltage
(IC = 50 mAdc, IB = 2.5 mAdc)
(IC = 300 mAdc, IB = 30 mAdc)
VBE(sat)
0.80
1.1
2.0
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain — Bandwidth Product
(VCE = 3.0 Vdc, IC = 50 mAdc, f = 100 MHz)
fT
150
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
10
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
25
pF
Input Impedance
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie
2000
Voltage Feedback Ratio
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
15
X 104
SmallSignal Current Gain
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
100
Output Admittance
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
1.2
mmhos
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 10 Vdc, IC = 300 mAdc, IB1 = 30 mAdc)
td
20
ns
Rise Time
tr
70
ns
Storage Time
(VCC = 10 Vdc, IC = 300 mAdc,
IB1 = 30 mAdc, IB2 = 30 mAdc)
ts
140
ns
Fall Time
tf
70
ns
TurnOn Time
(IC = 300 mAdc, IB1 = 30 mAdc)
ton
75
ns
TurnOff Time
(IC = 300 mAdc, IB1 = 30 mAdc, IB2 = 30 mAdc)
toff
170
ns
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
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