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參數(shù)資料
| 型號： | MPS3638AG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-11, TO-226AA, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 148K |
| 代理商： | MPS3638AG |
Switching Transistor
PNP Silicon
w This device is available in Pbfree package(s). Specifications herein
apply to both standard and Pbfree devices. Please see our website at
www.onsemi.com for specific Pbfree orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
25
Vdc
CollectorEmitter Voltage
VCES
25
Vdc
CollectorBase Voltage
VCBO
25
Vdc
EmitterBase Voltage
VEBO
4.0
Vdc
Collector Current — Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA(1)
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
V(BR)CES
25
—
Vdc
CollectorEmitter Sustaining Voltage(2)
(IC = 10 mAdc, IB = 0)
VCEO(sus)
25
—
Vdc
CollectorBase Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
25
—
Vdc
EmitterBase Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO
4.0
—
Vdc
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0)
(VCE = 15 Vdc, VBE = 0, TA = 65°C)
ICES
—
0.035
2.0
mAdc
Emitter Cutoff Current
(VEB = 3.0 V, IC = 0)
IEBO
—
35
nA
Base Current
(VCE = 15 Vdc, VBE = 0)
IB
—
0.035
mAdc
1. RqJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
ON Semiconductor
t
Semiconductor Components Industries, LLC, 2006
March, 2006 Rev. 2
1
Publication Order Number:
MPS3638A/D
MPS3638A
CASE 2911, STYLE 1
TO92 (TO226AA)
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS3639 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:PNP SMALL SIGNAL GENERAL PURPOSE AMPLIFIERS |
| MPS3640 | 制造商:Freescale Semiconductor 功能描述: 制造商:FRESCL 功能描述: 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, PNP Type, TO-92 |
| MPS3642C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN TRANSISTOR |
| MPS3646 | 功能描述:兩極晶體管 - BJT 300mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS3646C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN TRANSISTOR |
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