參數(shù)資料
型號(hào)： MPC8545EVUANJ
廠商： Freescale Semiconductor
文件頁數(shù)： 69/151頁
文件大?。?/td> 0K
描述： IC MPU PWRQUICC III 783-FCCBGA
標(biāo)準(zhǔn)包裝： 1
系列： MPC85xx
處理器類型： 32-位 MPC85xx PowerQUICC III
速度： 800MHz
電壓： 1.1V
安裝類型： 表面貼裝
封裝/外殼： 783-BBGA，F(xiàn)CBGA
供應(yīng)商設(shè)備封裝： 783-FCPBGA（29x29）
包裝： 托盤
MPC8548E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 9
24
Freescale Semiconductor
DDR and DDR2 SDRAM
NOTE
For the ADDR/CMD setup and hold specifications in Table 19, it is
assumed that the clock control register is set to adjust the memory clocks by
1/2 applied cycle.
Figure 3 shows the DDR SDRAM output timing for the MCK to MDQS skew measurement (tDDKHMH).
Figure 3. Timing Diagram for tDDKHMH
MDQS epilogue end
tDDKHME
–0.6
0.6
ns
6
Notes:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. Output hold time can be read as DDR timing
(DD) from the rising or falling edge of the reference clock (KH or KL) until the output went invalid (AX or DX). For example,
tDDKHAS symbolizes DDR timing (DD) for the time tMCK memory clock reference (K) goes from the high (H) state until outputs
(A) are setup (S) or output valid time. Also, tDDKLDX symbolizes DDR timing (DD) for the time tMCK memory clock reference
(K) goes low (L) until data outputs (D) are invalid (X) or data output hold time.
2. All MCK/MCK referenced measurements are made from the crossing of the two signals ±0.1 V.
3. ADDR/CMD includes all DDR SDRAM output signals except MCK/MCK, MCS, and MDQ/MECC/MDM/MDQS.
4. Note that tDDKHMH follows the symbol conventions described in note 1. For example, tDDKHMH describes the DDR timing (DD)
from the rising edge of the MCK[n] clock (KH) until the MDQS signal is valid (MH). tDDKHMH can be modified through control
of the MDQS override bits (called WR_DATA_DELAY) in the TIMING_CFG_2 register. This is typically set to the same delay
as in DDR_SDRAM_CLK_CNTL[CLK_ADJUST]. The timing parameters listed in the table assume that these 2 parameters
have been set to the same adjustment value. See the MPC8548E PowerQUICC III Integrated Processor Reference Manual
for a description and understanding of the timing modifications enabled by use of these bits.
5. Determined by maximum possible skew between a data strobe (MDQS) and any corresponding bit of data (MDQ), ECC
(MECC), or data mask (MDM). The data strobe must be centered inside of the data eye at the pins of the microprocessor.
6. All outputs are referenced to the rising edge of MCK[n] at the pins of the microprocessor. Note that tDDKHMP follows the
symbol conventions described in note 1.
Table 19. DDR SDRAM Output AC Timing Specifications (continued)
At recommended operating conditions.
Parameter
Symbol1
Min
Max
Unit
Notes
tDDKHMHmax) = 0.6 ns
MDQS
MCK[n]
tMCK
tDDKHMH(min) = –0.6 ns
MDQS
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