參數(shù)資料
型號(hào): MPC853TVR66A
廠商: Freescale Semiconductor
文件頁(yè)數(shù): 78/88頁(yè)
文件大?。?/td> 0K
描述: IC MPU POWERQUICC 66MHZ 256PBGA
標(biāo)準(zhǔn)包裝: 60
系列: MPC8xx
處理器類型: 32-位 MPC8xx PowerQUICC
速度: 66MHz
電壓: 1.8V
安裝類型: 表面貼裝
封裝/外殼: 256-BGA
供應(yīng)商設(shè)備封裝: 256-PBGA(23x23)
包裝: 托盤
MPC853T Hardware Specification, Rev. 1
8
Freescale Semiconductor
DC Characteristics
6
DC Characteristics
Table 5 provides the DC electrical characteristics for the MPC853T.
Table 4. Power Dissipation (PD)
Die Revision
Bus Mode
Frequency (MHz)
Typical 1
1
Typical power dissipation is measured at 1.9 V.
Maximum 2
2
Maximum power dissipation at VDDL and VDDSYN is at 1.9 V, and VDDH is at 3.465 V.
NOTE
Values in Table 4 represent VDDL-based power dissipation and do not
include I/O power dissipation over VDDH. I/O power dissipation varies
widely by application due to buffer current, which depends on external
circuitry.
The VDDSYN power dissipation is negligible.
Unit
0
1:1
50
110
140
mW
66
150
180
mW
2:1
66
140
160
mW
80
170
200
mW
100
210
250
mW
Table 5. DC Electrical Specifications
Characteristic
Symbol
Min
Max
Unit
Operating voltage
VDDH
3.135
3.465
V
VDDL
1.7
1.9
V
VDDSYN
1.7
1.9
V
Difference between VDDL
and VDDSYN
—100
mV
Input high voltage (all inputs except PA[0:3],
PA[8:11], PB15, PB[24:25]; PB[28:31], PC[4:7],
PC[12:13], PC15, PD[3:15], TDI, TDO, TCK, TRST,
TMS, MII_TXEN, MII_MDIO) 1
VIH
2.0
3.465
V
Input low voltage
VIL
GND
0.8
V
EXTAL, EXTCLK input high voltage
VIHC
0.7
× VDDH
VDDH
V
Input leakage current, Vin = 5.5 V (except the TMS,
TRST, DSCK, and DSDI pins) for 5-V tolerant pins 1
Iin
100
A
Input leakage current, Vin = VDDH (except TMS,
TRST, DSCK, and DSDI)
IIn
—10
A
Input leakage current, Vin = 0 V (except the TMS,
TRST, DSCK, and DSDI)
IIn
—10
A
Input capacitance 2
Cin
—20
pF
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