參數(shù)資料
型號(hào)： MPC8535EBVTATHA
廠商： Freescale Semiconductor
文件頁數(shù)： 56/126頁
文件大小： 0K
描述： MCU PWRQUICC II 1250MHZ 783-PBGA
標(biāo)準(zhǔn)包裝： 1
系列： MPC85xx
處理器類型： 32-位 MPC85xx PowerQUICC III
速度： 1.25GHz
電壓： 1V
安裝類型： 表面貼裝
封裝/外殼： 783-BBGA，F(xiàn)CBGA
供應(yīng)商設(shè)備封裝： 783-FCPBGA（29x29）
包裝： 托盤
其它名稱： MPC8535EBVTATH
MPC8535EBVTATH-ND
Electrical Characteristics
MPC8535E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 5
Freescale Semiconductor
35
NOTE
For the ADDR/CMD setup and hold specifications in Table 19, it is assumed that the Clock
Control register is set to adjust the memory clocks by 1/2 applied cycle.
<= 667 MHz
0.9
× tMCK
7
MDQS epilogue end
tDDKHME
ns
6
<= 667 MHz
0.4
× tMCK
0.6
× tMCK
7
Note:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state) (reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. Output hold time can be read as DDR timing
(DD) from the rising or falling edge of the reference clock (KH or KL) until the output went invalid (AX or DX). For example,
tDDKHAS symbolizes DDR timing (DD) for the time tMCK memory clock reference (K) goes from the high (H) state until outputs
(A) are setup (S) or output valid time. Also, tDDKLDX symbolizes DDR timing (DD) for the time tMCK memory clock reference
(K) goes low (L) until data outputs (D) are invalid (X) or data output hold time.
2. All MCK/MCK referenced measurements are made from the crossing of the two signals ±0.1 V.
3. ADDR/CMD includes all DDR SDRAM output signals except MCK/MCK, MCS, and MDQ/MECC/MDM/MDQS.
4. Note that tDDKHMH follows the symbol conventions described in note 1. For example, tDDKHMH describes the DDR timing (DD)
from the rising edge of the MCK[n] clock (KH) until the MDQS signal is valid (MH). tDDKHMH can be modified through control
of the DQSS override bits in the TIMING_CFG_2 register. This will typically be set to the same delay as the clock adjust in the
CLK_CNTL register. The timing parameters listed in the table assume that these 2 parameters have been set to the same
adjustment value. See the
MPC8536E PowerQUICC III Integrated Processor Reference Manual for a description and
understanding of the timing modifications enabled by use of these bits.
5. Determined by maximum possible skew between a data strobe (MDQS) and any corresponding bit of data (MDQ), ECC
(MECC), or data mask (MDM). The data strobe should be centered inside of the data eye at the pins of the microprocessor.
6. All outputs are referenced to the rising edge of MCK[n] at the pins of the microprocessor. Note that tDDKHMP follows the
symbol conventions described in note 1.
7. Maximum DDR2 and DDR3 frequency is 667 MHz
Table 19. DDR SDRAM Output AC Timing Specifications (continued)
At recommended operating conditions with GVDD of 1.8 V ± 5% for DDR2 or 1.5 V ± 5% for DDR3.
Parameter
Symbol 1
Min
Max
Unit
Notes
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