參數(shù)資料
型號(hào): MPC8533EVTARJ
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: 32-BIT, 1067 MHz, MICROPROCESSOR, PBGA783
封裝: 29 X 29 MM, 1 MM PITCH, LEAD FREE, PLASTIC, FC-PBGA-783
文件頁數(shù): 111/116頁
文件大?。?/td> 1273K
代理商: MPC8533EVTARJ
MPC8533E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 3
94
Freescale Semiconductor
Thermal
Table 66 provides the thermal resistance with heat sink in open flow.
Simulations with heat sinks were done with the package mounted on the 2s2p thermal test board. The
thermal interface material was a typical thermal grease such as Dow Corning 340 or Wakefield 120 grease.
For system thermal modeling, the MPC8533E thermal model without a lid is shown in Figure 56. The
substrate is modeled as a block 29
× 29 × 1.18 mm with an in-plane conductivity of 18.0 W/mK and a
through-plane conductivity of 1.0 W/mK. The solder balls and air are modeled as a single block
29
× 29 × 0.58 mm with an in-plane conductivity of 0.034 W/mK and a through plane conductivity of
12.1 W/mK. The die is modeled as 7.6
× 8.4 mm with a thickness of 0.75 mm. The bump/underfill layer
is modeled as a collapsed thermal resistance between the die and substrate assuming a conductivity of
6.5 W/mK in the thickness dimension of 0.07 mm. The die is centered on the substrate. The thermal model
uses approximate dimensions to reduce grid. Please refer to Figure 55 for actual dimensions.
20.2
Recommended Thermal Model
Table 67 shows the MPC8533E thermal model.
Table 66. Thermal Resistance with Heat Sink in Open Flow
Heat Sink with Thermal Grease
Air Flow
Thermal Resistance (
°C/W)
Wakefield 53
× 53 × 25 mm pin fin
Natural convection
6.1
Wakefield 53
× 53 × 25 mm pin fin
1 m/s
3.0
Aavid 35
× 31 × 23 mm pin fin
Natural convection
8.1
Aavid 35
× 31 × 23 mm pin fin
1 m/s
4.3
Aavid 30
× 30 × 9.4 mm pin fin
Natural convection
11.6
Aavid 30
× 30 × 9.4 mm pin fin
1 m/s
6.7
Aavid 43
× 41 × 16.5 mm pin fin
Natural convection
8.3
Aavid 43
× 41 × 16.5 mm pin fin
1 m/s
4.3
Table 67. MPC8533EThermal Model
Conductivity
Value
Units
Die (7.6
× 8.4 × 0.75mm)
Silicon
Temperature dependent
Bump/Underfill (7.6
× 8.4 × 0.070 mm) Collapsed Thermal Resistance
Kz
6.5
W/mK
Substrate (29
× 29 × 1.18 mm)
Kx
18
W/mK
Ky
18
Kz
1.0
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